Intel & Corning to Develop New Lithography Technology

Intel & Corning to Develop New Lithography Technology
Posted :: Jul 7, 2005 by Haggs

Intel Corporation has issued a press release stating that it will be entering a joint development agreement for extreme ultraviolet photomask substrates focused on UTE glass photomask substrates for extreme ultraviolet. What a mouthful! To simplify, this means that Intel, a world leader in semiconductor and CPU techonology, will be teaming up with Corning Semiconductor Optics (www.corning.com) to work on a technology known as Extreme Ultraviolet Lithography (EUVL) that will allow Intel to create smaller, more reliable transistors.

Today's processors contain millions of transistors, and by reducing the size of the transistors the processor manufacturers can increase the transistor count. By increasing the number of transistors inside the processor, Intel will be able to continue increasing CPU performance.

Intel explains that currently "Lithography tools are used in chip making to ‘print' patterns on a silicon wafer. Today, the industry uses lithography tools that use a 193nm wavelength of light to ‘print' transistors as small as 50nm. That is equivalent to a painter trying to draw very fine lines using a thick brush. EUV lithography technology will use light that is only 13.5nm wavelength of light, so it can provide chip makers with a very ‘fine brush' to ‘draw' smaller transistors in the future."

Since EUVL operates at a smaller wavelength than conventional photolithography, it has inherently different physical properties and the ultraviolet light must be reflected from mirrors (like lasers) rather than refracted through lenses. Intel and Corning Semiconductor are faced with the challenge of building mirrors precise enough to reflect the light with great precision.

Extreme ultraviolet lithography is not the only method under investigation. Many researchers are also examining the potential of electron beam lithography which also offers a very short wavelength, suitable for nano-scale device development. The primary difference between photolithography or Intel and Corning's extreme ultraviolet lithography and electron beam lithography is that the electron beam lithography does not require a mask and can simply draw or carve on the semiconductor wafer much like a very fine tipped pen.